?2000 fairchild semiconductor corporation 1 www.fairchildsemi.com FGL60N100BNTD rev. c1 FGL60N100BNTD ? 1000 v, 60 a npt trench igbt november 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics symbol description ratings unit v ces collector to emitter voltage 1000 v v ges gate to emitter voltage ? 25 v i c collector current @ t c = 25 o c 60 a collector current @ t c = 100 o c 42 a i cm (1) pulsed collector current @ t c = 25 o c 120 a i f diode continuous forward current @ t c = 100 o c 15 a p d maximum power dissipation @ t c = 25 o c180 w maximum power dissipation @ t c = 100 o c72 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter ratings unit r ? jc (igbt) thermal resistance, junction to case 0.69 o c / w r ? jc (diode) thermal resistance, junction to case 2.08 o c / w r ? ja thermal resistance, junction to ambient 25 o c / w FGL60N100BNTD 1000 v, 60 a npt trench igbt features ? high speed switching ? low saturation voltage: v ce(sat) = 2.5 v @ i c = 60 a ? high input impedance ? built-in fast recovery diode applications ? ups, welder general description using fairchild's proprietary trench design and advanced npt technology, the 1000v npt igbt offers superior conduction and switching performances , high avalanche ruggedness and easy parallel operation. this device offers the optimum perfor- mance for hard switching application such as ups, welder applications. g e c to-264 3l g c e
?2000 fairchild semiconductor corporation 2 www.fairchildsemi.com FGL60N100BNTD rev. c1 FGL60N100BNTD ? 1000 v, 60 a npt trench igbt package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted electrical characteristi cs of the diode t c = 25c unless otherwise noted part number top mark package packing method reel size tape width quantity FGL60N100BNTD FGL60N100BNTD to-264 tube n/a n/a 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0 v, i c = 1 ma 1000 - - v i ces collector cut-off current v ce = v ces , v ge = 0 v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0 v - - 500 na on characteristics v ge(th) g-e threshold voltage i c = 60 ma, v ce = v ge 4.0 5.0 7.0 v v ce(sat) collector to emitter saturation voltage i c =10 a , v ge = 15 v -1.51.8v i c = 60 a , v ge = 15 v, -2.52.9v dynamic characteristics c ies input capacitance v ce = 10 v , v ge = 0 v, f = 1mhz - 6000 - pf c oes output capacitance - 260 - pf c res reverse transfer capacitance - 200 - pf switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 60 a, r g = 51 ? , v ge = 15 v, inductive load, t c = 25 o c - 140 - ns t r rise time - 320 - ns t d(off) turn-off delay time - 630 - ns t f fall time - 130 - ns q g total gate charge v ce = 600 v, i c = 60 a, v ge = 15 v, t c = 25 o c - 275 - nc q ge gate to emitter charge - 45 - nc q gc gate to collector charge - 95 - nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 15 a -1.21.7v i f = 60 a -1.82.1v t rr diode reverse recovery time i f = 60 a, di/dt = 20 a/us -1.21.5us i r instantaneous v rrm = 1000 v - 0.05 2.0 ua
?2000 fairchild semiconductor corporation 3 www.fairchildsemi.com FGL60N100BNTD rev. c1 FGL60N100BNTD ? 1000 v, 60 a npt trench igbt typical performance characteristics figure 1. typical output characteristics figur e 2. typical saturation voltage characteristics figure 3. saturation voltage vs. case figu re 4. saturation voltage vs. v ge temperature at variant current level figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge 012345 0 20 40 60 80 100 20v 15v 10v 9v 8v 7v v ge = 6v common emitter t c = 25 collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 10 20 30 40 50 60 70 80 90 t c = 125 t c = 25 common emitter v ge = 15v t c = 25 t c = 125 ------ collector current, i c [a] collector-emitte r voltage, v ce [v] -50 0 50 100 150 1 2 3 i c =10a 30a 60a 80a common emitter v ge =15v collector-emitter voltage, v ce [v] case temperature, t c [] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = - 40 o c i c =10a 80a 60a 30a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = 25 80a 60a 30a i c = 10a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = 125 80a 60a 30a i c = 10a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v]
?2000 fairchild semiconductor corporation 4 www.fairchildsemi.com FGL60N100BNTD rev. c1 FGL60N100BNTD ? 1000 v, 60 a npt trench igbt typical performance characteristics figure 7. capacitance characteristics figure 8. switching loss vs. gate resistance figure 9. switching characteristics vs. figure 10 . gate charge characteristics collector current figure 11. soa characteristics figure 12. forward characteristics 0 5 10 15 20 25 30 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 cres coes cies capacitance [pf] collector-emitter voltage, v ce [v] 0 50 100 150 200 10 100 1000 10000 v cc =600v, i c =60a v ge =? 5v t c =25 o c tdoff tdon tr tf switching time [ns] gate resistance, r g [? ] 10 20 30 40 50 60 100 1000 v cc =600v, rg=51 ? v ge = 15v, t c =25 tdon tr tf tdoff switching time [ns] collector current, i c [a] 0 50 100 150 200 250 300 0 5 10 15 20 common emitter v cc =600v, r l =10 ? t c =25 gate-emitter voltage,v ge [v] gate charge, q g [nc] 1 10 100 1000 0.1 1 10 100 single nonrepetitive pulse t c = 25 curve must be darated linearly with increase in temperature 50us 100us 1ms dc operation i c max. (pulsed) i c max. (continuous) collector current , i c [a] collector-emitter voltage, v ce [v] 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t c = 25 t c = 100 forward voltage, v fm [v] forward current, i f [a]
?2000 fairchild semiconductor corporation 5 www.fairchildsemi.com FGL60N100BNTD rev. c1 FGL60N100BNTD ? 1000 v, 60 a npt trench igbt typical performance characteristics figure 13. reverse recovery characteristics fi gure 14. reverse recovery characteristics vs. di/dt vs. forwa rd current figure 15. reverse current vs. reverse voltage figure 16. junction capacitance figure 17 .transient thermal impedance of igbt 0 40 80 120 160 200 240 0.00 0.17 0.34 0.51 0.68 0.85 1.02 1.19 i rr t rr i f =60a t c =25? di/dt [a/us] reverse recovery time, t rr [us] 0 17 34 51 68 85 102 119 reverse recovery current i rr [a] 10 20 30 40 50 60 0.4 0.6 0.8 1.0 1.2 i rr t rr forward current, i f [a] reverse recovery time, t rr [us] 4 6 8 10 12 di/dt=-20a/us t c =25? reverse recovery current i rr [a] 0 300 600 900 1e-3 0.01 0.1 1 10 100 1000 t c = 150 t c = 25 reverse current, i r [ua] reverse voltage, v r [v] 0.1 1 10 100 0 50 100 150 200 250 t c = 25 capacitance, c j [pf] reverse voltage, v r [v] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 10 0.1 0.5 0.2 0.05 0.02 0.01 s in g le p u ls e thermal response, z thjc [/w] r ectangular pulse d uration [sec] t 1 p dm t 2
?2000 fairchild semiconductor corporation 6 www.fairchildsemi.com FGL60N100BNTD rev. c1 FGL60N100BNTD ? 1000 v, 60 a npt trench igbt mechanical dimensions figure 18. to-264 3l - 3ld; to264; molded; jedec variation aa package drawings are provided as a service to customers considering fairchil d components. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, wh ich covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/package/pa ckagedetails.html?id=pn_to264-003
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